Nexperia PUMH13,115

Nexperia · Transistors (BJTs) · MPN PUMH13,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)230MHz
Emitter-Base Voltage VEBO5V
DC Current Gain100
Vce Saturation(VCE(sat))100mV
Input Resistor4.7kΩ
Resistor Ratio12
Pd - Power Dissipation300mW
Voltage - Input(Max)(VI(off))500mV
Input Voltage (VI(on)@Ic,Vce)1.3V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 0.3W Surface Mount SOT-363

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