Nexperia · Transistors (BJTs) · MPN PUMD6,125
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| DC Current Gain | 200 |
|---|---|
| Output Voltage(VO(on)) | - |
| Input Resistor | 4.7kΩ |
| Resistor Ratio | - |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| Pd - Power Dissipation | 300mW |
| Input Voltage (VI(on)@Ic,Vce) | - |
| Current - Collector(Ic) | 100mA |
| Voltage - Input(Max)(VI(off)) | - |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -65℃~+150℃ |
200 1 NPN Pre-Biased, 1 PNP Pre-Biased 300mW 100mA 50V SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS