Nexperia PUMD3-QX

Nexperia · Transistors (BJTs) · MPN PUMD3-QX

No reviews yet — be the first to review Nexperia PUMD3-QX.

Specifications

Current - Collector Cutoff100nA
DC Current Gain30
Emitter-Base Voltage VEBO10V
Vce Saturation(VCE(sat))100mV
typeNPN+PNP
Number1 NPN Pre-Biased, 1 PNP Pre-Biased
Resistor Ratio1
Pd - Power Dissipation300mW
Voltage - Input(Max)(VI(off))800mV@100uA,5V
Current - Collector(Ic)100mA
Input Voltage (VI(on)@Ic,Vce)2.5V
Collector - Emitter Voltage VCEO50V

Technical details

30 1 NPN Pre-Biased, 1 PNP Pre-Biased 300mW 100mA 50V SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS

Related Transistors (BJTs)