Nexperia · Transistors (BJTs) · MPN PUMD2,115
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| DC Current Gain | 60 |
|---|---|
| Output Voltage(VO(on)) | - |
| Input Resistor | 22kΩ |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 300mW |
| Voltage - Input(Max)(VI(off)) | 800mV |
| Current - Collector(Ic) | 100mA |
| Input Voltage (VI(on)@Ic,Vce) | 1.7V |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃ |
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP Pre-Biased 50V 100mA 300mW Surface Mount TSSOP-6(SOT-363)