Nexperia PUMD12-QX

Nexperia · Transistors (BJTs) · MPN PUMD12-QX

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Specifications

Current - Collector Cutoff100nA
DC Current Gain80
Emitter-Base Voltage VEBO10V
Vce Saturation(VCE(sat))100mV
typeNPN+PNP
Number1 NPN Pre-Biased, 1 PNP Pre-Biased
Resistor Ratio1
Pd - Power Dissipation300mW
Voltage - Input(Max)(VI(off))800mV@100uA,5V
Current - Collector(Ic)100mA
Input Voltage (VI(on)@Ic,Vce)3V
Collector - Emitter Voltage VCEO50V

Technical details

80 1 NPN Pre-Biased, 1 PNP Pre-Biased 300mW 100mA 50V SC-74 Bipolar Transistor Arrays, Pre-Biased RoHS

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