Nexperia PSMN8R9-100BSE,118

Nexperia · FETs & Power MOSFETs · MPN PSMN8R9-100BSE,118

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Specifications

Gate Charge(Qg)114nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)75A
Output Capacitance(Coss)447pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.7V
Pd - Power Dissipation296W
Reverse Transfer Capacitance (Crss@Vds)237pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.028nF
TypeN-Channel

Technical details

N-Channel 100V 296W Surface Mount D2PAK

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