Nexperia PSMN8R7-100YSFX

Nexperia · FETs & Power MOSFETs · MPN PSMN8R7-100YSFX

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Specifications

Gate Charge(Qg)38.5nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation198W
Reverse Transfer Capacitance (Crss@Vds)17pF
RDS(on)14mΩ
Number1 N-channel
Input Capacitance(Ciss)2.758nF

Technical details

N-Channel 100V 90A 198W LFPAK56(PowerSO-8)

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