Nexperia · FETs & Power MOSFETs · MPN PSMN8R5-108ES
No reviews yet — be the first to review Nexperia PSMN8R5-108ES.
| Gate Charge(Qg) | 111nC@10V |
|---|---|
| Drain to Source Voltage | 108V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 263W |
| Reverse Transfer Capacitance (Crss@Vds) | 256pF |
| RDS(on) | 8.5mΩ@10V |
| Input Capacitance(Ciss) | 5.512nF |
| Type | N-Channel |
108V 100A 4V 263W 8.5mΩ@10V N-Channel Single FETs, MOSFETs RoHS