Nexperia PSMN8R5-100PSFQ

Nexperia · FETs & Power MOSFETs · MPN PSMN8R5-100PSFQ

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Specifications

Gate Charge(Qg)44.5nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)98A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation183W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)8.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.181nF

Technical details

100V 98A 183W 8.7mΩ@10V 1 N-channel SOT-78 Single FETs, MOSFETs RoHS

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