Nexperia PSMN8R5-100PS

Nexperia · FETs & Power MOSFETs · MPN PSMN8R5-100PS

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Specifications

Gate Charge(Qg)111nC@10V
Configuration-
Drain to Source Voltage100V
Output Capacitance(Coss)380pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation263W
Reverse Transfer Capacitance (Crss@Vds)256pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.512nF

Technical details

100V 100A 4V 263W 8.5mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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