Nexperia PSMN8R5-100ESQ

Nexperia · FETs & Power MOSFETs · MPN PSMN8R5-100ESQ

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Specifications

Configuration-
Gate Charge(Qg)-
Drain to Source Voltage100V
Current - Continuous Drain(Id)100A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

100V 100A 2.4V 1 N-channel SOT-226-3 Single FETs, MOSFETs RoHS

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