Nexperia PSMN8R3-40YS,115

Nexperia · FETs & Power MOSFETs · MPN PSMN8R3-40YS,115

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation74W
RDS(on)8.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.215nF

Technical details

40V 70A 4V 74W 8.6mΩ@10V 1 N-channel SOT-669 Single FETs, MOSFETs RoHS

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