Nexperia PSMN8R2-80YS,115

Nexperia · FETs & Power MOSFETs · MPN PSMN8R2-80YS,115

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Specifications

Gate Charge(Qg)55nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)82A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation130W
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.64nF

Technical details

80V 82A 130W 8.5mΩ@10V 1 N-channel SOT-669 Single FETs, MOSFETs RoHS

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