Nexperia PSMN7R8-120ESQ

Nexperia · FETs & Power MOSFETs · MPN PSMN7R8-120ESQ

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Specifications

Gate Charge(Qg)167nC@10V
Drain to Source Voltage120V
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation349W
Reverse Transfer Capacitance (Crss@Vds)298pF
RDS(on)7.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.473nF

Technical details

120V 70A 4V 349W 7.9mΩ@10V 1 N-channel SOT-226-3 Single FETs, MOSFETs RoHS

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