Nexperia PSMN7R8-100PSEQ

Nexperia · FETs & Power MOSFETs · MPN PSMN7R8-100PSEQ

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Specifications

Gate Charge(Qg)128nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)83A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation294W
Reverse Transfer Capacitance (Crss@Vds)310pF
RDS(on)7.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.11nF

Technical details

100V 83A 3V 294W 7.8mΩ@10V 1 N-channel TO-220AB Single FETs, MOSFETs RoHS

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