Nexperia PSMN7R6-100BSEJ

Nexperia · FETs & Power MOSFETs · MPN PSMN7R6-100BSEJ

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Specifications

Gate Charge(Qg)128nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation296W
Reverse Transfer Capacitance (Crss@Vds)310pF
RDS(on)7.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.11nF

Technical details

100V 75A 3V 296W 7.6mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS

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