Nexperia · FETs & Power MOSFETs · MPN PSMN6R9-100YSFX
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| Gate Charge(Qg) | 50.3nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 238W |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF |
| RDS(on) | 7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.57nF |
100V 2V 238W 7mΩ@10V 1 N-channel LFPAK-56-5 Single FETs, MOSFETs RoHS