Nexperia · FETs & Power MOSFETs · MPN PSMN6R4-30MLD,115
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| Gate Charge(Qg) | 19nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 66A |
| Output Capacitance(Coss) | 587pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 51W |
| RDS(on) | 8.3mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 64pF |
| Input Capacitance(Ciss) | 832pF |
| Type | N-Channel |
30V 66A 2.2V 51W 8.3mΩ@4.5V N-Channel Single FETs, MOSFETs RoHS