Nexperia · FETs & Power MOSFETs · MPN PSMN6R3-120ESQ
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| Gate Charge(Qg) | 207.1nC@10V |
|---|---|
| Drain to Source Voltage | 120V |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 405W |
| Reverse Transfer Capacitance (Crss@Vds) | 358pF |
| RDS(on) | 6.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.384nF |
120V 70A 4V 405W 6.7mΩ@10V 1 N-channel SOT-226-3 Single FETs, MOSFETs RoHS