Nexperia PSMN6R1-30YLDX

Nexperia · FETs & Power MOSFETs · MPN PSMN6R1-30YLDX

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Specifications

Gate Charge(Qg)13.6nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)66A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation47W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)817pF

Technical details

30V 66A 2.2V 47W 6mΩ@10V 1 N-channel SOT-669 Single FETs, MOSFETs RoHS

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