Nexperia · FETs & Power MOSFETs · MPN PSMN6R1-30YLDX
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| Gate Charge(Qg) | 13.6nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 66A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 47W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 817pF |
30V 66A 2.2V 47W 6mΩ@10V 1 N-channel SOT-669 Single FETs, MOSFETs RoHS