Nexperia PSMN6R1-30YLD115

Nexperia · FETs & Power MOSFETs · MPN PSMN6R1-30YLD115

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Specifications

Configuration-
Gate Charge(Qg)10.2nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)908pF
Current - Continuous Drain(Id)66A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation47W
Reverse Transfer Capacitance (Crss@Vds)93pF
RDS(on)6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.225nF

Technical details

30V 66A 2.2V 47W 6mΩ@10V 1 N-channel N-Channel Single FETs, MOSFETs RoHS

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