Nexperia PSMN6R1-25MLDX

Nexperia · FETs & Power MOSFETs · MPN PSMN6R1-25MLDX

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Specifications

Gate Charge(Qg)10.7nC@10V
Drain to Source Voltage25V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)7.24mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)702pF

Technical details

25V 60A 2.2V 42W 7.24mΩ@10V 1 N-channel SOT-1210 Single FETs, MOSFETs RoHS

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