Nexperia PSMN6R0-30YLB,115

Nexperia · FETs & Power MOSFETs · MPN PSMN6R0-30YLB,115

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Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)71A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.95V
Pd - Power Dissipation58W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)6.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.088nF

Technical details

30V 71A 1.95V 58W 6.5mΩ@10V 1 N-channel SOT-669 Single FETs, MOSFETs RoHS

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