Nexperia · FETs & Power MOSFETs · MPN PSMN6R0-25YLDX
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| Gate Charge(Qg) | 10.5nC@10V |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 61A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 43W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 6.75mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 705pF |
25V 61A 2.2V 43W 6.75mΩ@10V 1 N-channel SOT-669 Single FETs, MOSFETs RoHS