Nexperia PSMN6R0-25YLD115

Nexperia · FETs & Power MOSFETs · MPN PSMN6R0-25YLD115

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Specifications

Gate Charge(Qg)10.5nC@10V
Drain to Source Voltage25V
Current - Continuous Drain(Id)61A
Output Capacitance(Coss)598pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation43W
Reverse Transfer Capacitance (Crss@Vds)46pF
RDS(on)6.75mΩ@10V
Input Capacitance(Ciss)705pF
TypeN-Channel

Technical details

25V 61A 2.2V 43W 6.75mΩ@10V N-Channel Single FETs, MOSFETs RoHS

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