Nexperia PSMN6R0-25YLB,115

Nexperia · FETs & Power MOSFETs · MPN PSMN6R0-25YLB,115

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Specifications

Gate Charge(Qg)19.3nC@10V
Drain to Source Voltage25V
Current - Continuous Drain(Id)73A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.95V
Pd - Power Dissipation58W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)6.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.099nF

Technical details

25V 73A 1.95V 58W 6.1mΩ@10V 1 N-channel SOT-669 Single FETs, MOSFETs RoHS

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