Nexperia · FETs & Power MOSFETs · MPN PSMN5R8-40YS,115
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| Gate Charge(Qg) | 28.8nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 90A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 89W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 5.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.703nF |
40V 90A 4V 89W 5.7mΩ@10V 1 N-channel SOT-669 Single FETs, MOSFETs RoHS