Nexperia · FETs & Power MOSFETs · MPN PSMN5R6-100XS
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| Gate Charge(Qg) | 145nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 61.8A |
| Operating Temperature - | -40℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 60W |
| RDS(on) | 5.6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 330pF |
| Input Capacitance(Ciss) | 8.061nF |
| Type | N-Channel |
100V 61.8A 4V 60W 5.6mΩ@10V N-Channel Single FETs, MOSFETs RoHS