Nexperia PSMN5R6-100BS,118

Nexperia · FETs & Power MOSFETs · MPN PSMN5R6-100BS,118

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Specifications

Gate Charge(Qg)141nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)561pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation306W
Reverse Transfer Capacitance (Crss@Vds)330pF
RDS(on)5.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.061nF
TypeN-Channel

Technical details

N-Channel 100V 100A 306W Surface Mount D2PAK

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