Nexperia PSMN5R4-25YLDX

Nexperia · FETs & Power MOSFETs · MPN PSMN5R4-25YLDX

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Specifications

Gate Charge(Qg)12.4nC@10V
Drain to Source Voltage25V
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation47W
Reverse Transfer Capacitance (Crss@Vds)53pF
RDS(on)5.69mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)858pF

Technical details

25V 70A 1.8V 47W 5.69mΩ@10V 1 N-channel SOT-669 Single FETs, MOSFETs RoHS

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