Nexperia PSMN4R8-100YSEX

Nexperia · FETs & Power MOSFETs · MPN PSMN4R8-100YSEX

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Specifications

Gate Charge(Qg)120nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)2.14nF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.6V
Pd - Power Dissipation294W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)4.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.29nF
TypeN-Channel

Technical details

N-Channel 100V 120A 294W Surface Mount LFPAK-56

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