Nexperia · FETs & Power MOSFETs · MPN PSMN4R8-100BSEJ
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| Gate Charge(Qg) | 278nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 405W |
| Reverse Transfer Capacitance (Crss@Vds) | 643pF |
| RDS(on) | 4.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 14.4nF |
N-Channel 100V 120A 405W Surface Mount D2PAK