Nexperia · FETs & Power MOSFETs · MPN PSMN4R8-100BSE,118
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 278nC@10V |
| Output Capacitance(Coss) | 910pF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 405W |
| RDS(on) | 13mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 643pF |
| Input Capacitance(Ciss) | 14.4nF |
| Type | N-Channel |
100V 120A 4V 405W 13mΩ@10V N-Channel Single FETs, MOSFETs RoHS