Nexperia PSMN4R6-60BS,118

Nexperia · FETs & Power MOSFETs · MPN PSMN4R6-60BS,118

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Specifications

Gate Charge(Qg)70.8nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation211W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)4.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.426nF

Technical details

N-Channel 60V 100A 211W Surface Mount D2PAK

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