Nexperia · FETs & Power MOSFETs · MPN PSMN4R6-60BS,118
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| Gate Charge(Qg) | 70.8nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 211W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 4.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.426nF |
N-Channel 60V 100A 211W Surface Mount D2PAK