Nexperia PSMN4R5-40BS,118

Nexperia · FETs & Power MOSFETs · MPN PSMN4R5-40BS,118

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Specifications

Gate Charge(Qg)42.3nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation148W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.683nF

Technical details

40V 100A 148W 4.5mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS

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