Nexperia · FETs & Power MOSFETs · MPN PSMN4R4-80BS,118
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| Output Capacitance(Coss) | 700pF |
|---|---|
| Pd - Power Dissipation | 306W |
| Configuration | - |
| Gate Charge(Qg) | 125nC@10V |
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Reverse Transfer Capacitance (Crss@Vds) | 336pF |
| RDS(on) | 4.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.4nF |
306W 80V 100A 3V 4.5mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS