Nexperia · FETs & Power MOSFETs · MPN PSMN4R3-30BL,118
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| Gate Charge(Qg) | 41.5nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.15V |
| Pd - Power Dissipation | 103W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 4.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.4nF |
30V 100A 2.15V 103W 4.1mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS