Nexperia PSMN4R3-100PS,127

Nexperia · FETs & Power MOSFETs · MPN PSMN4R3-100PS,127

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Specifications

Gate Charge(Qg)170nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)660pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation338W
Reverse Transfer Capacitance (Crss@Vds)381pF
RDS(on)4.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.9nF
Vgs±20V

Technical details

N-Channel 100V 120A 338W Through Hole ITO-220AB-3

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