Nexperia · FETs & Power MOSFETs · MPN PSMN4R2-80YSEX
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 110nC@10V |
| Current - Continuous Drain(Id) | 170A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 294W |
| RDS(on) | 4.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8nF |
80V 170A 3.6V 294W 4.2mΩ@10V 1 N-channel LFPAK56,Power-SO8 Single FETs, MOSFETs RoHS