Nexperia · FETs & Power MOSFETs · MPN PSMN4R2-80YSE
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| Gate Charge(Qg) | 110nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 2.381nF |
| Current - Continuous Drain(Id) | 170A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 294W |
| Reverse Transfer Capacitance (Crss@Vds) | 164pF |
| RDS(on) | 4.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8nF |
| Type | N-Channel |
80V 170A 3.6V 294W 4.2mΩ@10V 1 N-channel N-Channel Single FETs, MOSFETs RoHS