Nexperia PSMN4R1-30YLC,115

Nexperia · FETs & Power MOSFETs · MPN PSMN4R1-30YLC,115

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Specifications

Gate Charge(Qg)23nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)92A
Gate Threshold Voltage (Vgs(th))1.95V
Pd - Power Dissipation67W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)4.35mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.502nF

Technical details

30V 92A 1.95V 67W 4.35mΩ@10V 1 N-channel SOT-669 Single FETs, MOSFETs RoHS

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