Nexperia PSMN3R9-60PSQ

Nexperia · FETs & Power MOSFETs · MPN PSMN3R9-60PSQ

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Specifications

Gate Charge(Qg)103nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation263W
Reverse Transfer Capacitance (Crss@Vds)460pF
RDS(on)3.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.6nF

Technical details

N-Channel 60V 130A 263W Through Hole TO-220AB

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