Nexperia · FETs & Power MOSFETs · MPN PSMN3R9-100YSFX
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| Gate Charge(Qg) | 120nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 294W |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF |
| RDS(on) | 4.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.73nF |
100V 120A 2V 294W 4.3mΩ@10V 1 N-channel LFPAK56E-4 Single FETs, MOSFETs RoHS