Nexperia · FETs & Power MOSFETs · MPN PSMN3R8-100BS,118
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| Gate Charge(Qg) | 170nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 306W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 3.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.9nF |
100V 120A 4V 306W 3.9mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS