Nexperia · FETs & Power MOSFETs · MPN PSMN3R7-100BSEJ
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| Gate Charge(Qg) | 246nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.66V |
| Pd - Power Dissipation | 405W |
| Reverse Transfer Capacitance (Crss@Vds) | 494pF |
| RDS(on) | 3.95mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 16.37nF |
100V 120A 2.66V 405W 3.95mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS