Nexperia PSMN3R3-80YSFX

Nexperia · FETs & Power MOSFETs · MPN PSMN3R3-80YSFX

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Specifications

Output Capacitance(Coss)1.121nF
Pd - Power Dissipation254W
Configuration-
Drain to Source Voltage80V
Gate Charge(Qg)70nC
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
RDS(on)2.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)53pF
Number1 N-channel
Input Capacitance(Ciss)4.896nF

Technical details

254W 80V 3V 2.5mΩ@10V 1 N-channel N-Channel PowerSO-8 Single FETs, MOSFETs RoHS

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