Nexperia PSMN3R3-60PLQ

Nexperia · FETs & Power MOSFETs · MPN PSMN3R3-60PLQ

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Specifications

Gate Charge(Qg)175nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation293W
Reverse Transfer Capacitance (Crss@Vds)427pF
RDS(on)3.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)10.115nF

Technical details

60V 130A 2.1V 293W 3.4mΩ@10V 1 N-channel TO-220AB Single FETs, MOSFETs RoHS

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