Nexperia PSMN3R3-40MSHX

Nexperia · FETs & Power MOSFETs · MPN PSMN3R3-40MSHX

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Specifications

Gate Charge(Qg)42nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)118A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation101W
Reverse Transfer Capacitance (Crss@Vds)115pF
RDS(on)3.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.188nF

Technical details

40V 118A 3V 101W 3.3mΩ@10V 1 N-channel SOT-1210 Single FETs, MOSFETs RoHS

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