Nexperia · FETs & Power MOSFETs · MPN PSMN3R0-30YL,115
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| Gate Charge(Qg) | 45.8nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.15V |
| Pd - Power Dissipation | 81W |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.822nF |
30V 100A 2.15V 81W 1 N-channel SOT-669 Single FETs, MOSFETs RoHS