Nexperia PSMN2R9-30MLC,115

Nexperia · FETs & Power MOSFETs · MPN PSMN2R9-30MLC,115

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Specifications

Gate Charge(Qg)36.1nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.15V
Pd - Power Dissipation91W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)2.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.419nF

Technical details

30V 70A 2.15V 91W 2.9mΩ@10V 1 N-channel SOT-1210 Single FETs, MOSFETs RoHS

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